Hostname: page-component-848d4c4894-4hhp2 Total loading time: 0 Render date: 2024-06-02T09:55:40.142Z Has data issue: false hasContentIssue false
  • English
  • Français

GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors

Published online by Cambridge University Press:  29 November 2013

Michael S. Shur  and
M. Asif Khan
Get access

Extract

In this article, we review recent progress in GaN-based photodetectors and field-effect transistors (FETs), including optoelectronic FETs, and discuss materials parameters and fabrication technologies that determine the device characteristics of these two device families. Many types of visible-blind photodetectors and nearly all types of FETs have been demonstrated in GaN-based materials systems. However many challenges remain, both in improving the existing devices—the performance of which is still quite far from reaching its full potential—and in developing entirely new devices, which use unique properties of this wide-bandgap materials system.

Type
Research Article
Information
MRS Bulletin , Volume 22 , Issue 2 , February 1997 , pp. 44 - 50
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Shur, M.S. and Khan, M.A., Proc. Symp. on Wide Band Gap Semiconductors and Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII), edited by Ren, F., Buckley, D.N., Pearton, S.J., Van Daele, P., Chi, G.C., Kamijoh, T., and Schuermeyer, F., 95–21 (The Electrochemical Society, Inc., New Jersey, 1995) p. 128; U.V. Bhapkar and M.S. Shur, “Velocity-Field Characteristics of 2-D and 3-D Electron Gases in GaN” (unpublished manuscript).Google Scholar
2.Nemanich, R., Benjamin, M.C., King, S.W., Bremser, M.D., Davis, R.F., Chen, B., Zhang, Z., and Bernholc, J., “Negative Electron Affinity of A1N and A1N Alloys” (MRS 1995 Fall Meeting).CrossRefGoogle Scholar
3.Benjamin, M.C., Wang, C., Davis, R.F., and Nemanich, R.J., “Observation of a Negative Electron Affinity for Heteroepitaxial A1N on a(6H)–SiC(0001),” Appl. Phys. Lett. 64 (1994) p. 3288.CrossRefGoogle Scholar
4. For example, see http://www2.ncsu.edu/ncsu/pams/physics/Surf_Sci_Lab/wide/jc.html.Google Scholar
5.Pankove, J.I. and Berkeyheiser, J.E., J. Appl. Phys. 45 (1974) p. 3892.CrossRefGoogle Scholar
6.Khan, M. Asif, Kuznia, J.N., Olson, D.T., Van Hove, J.M., Blasingame, M., and Reitz, L.F., “High-Responsivity Photoconductive Ultraviolet Sensors Based on Insulating Single-Crystal GaN Epilayers,” Appl. Phys. Lett. 60 (23) (1992) p. 2917.CrossRefGoogle Scholar
7.Stevens, K.S., Kinniburgh, M., and Beresford, R., “Photoconductive Ultraviolet Sensor Using Mg-Doped GaN on Si(111),” Appl. Phys. Lett. 66 (25) (1995) p. 3518.CrossRefGoogle Scholar
8.Kung, P., Zhang, X., Walker, D., Saxler, A., Piotrowski, J., Rogalski, A., and Razeghi, M., “Kinetics of Photoconductivity in n-Type GaN Photodetector,” Appl. Phys. Lett. 67 (25) (1995) p. 3792.CrossRefGoogle Scholar
9.Qiu, C.H., Hogatt, C., Melton, W., Leksono, M. W., and Pankove, J.I., “Study of Defect States in GaN Films by Photoconductivity Measurement,” Appl. Phys. Lett. 66 (20) (1995) p. 2712.CrossRefGoogle Scholar
10.Walker, D., Kung, P., Saxler, A., Zhang, X.L., Razeghi, M., and Jurgensen, H., “GaN Based Semiconductors for Future Optoelectronics,” Inst. Phys. Conf. Ser. 145 (1996) p. 1133.Google Scholar
11.Walker, D., Zhang, X.L., Kung, P.. Saxler, A., Javadpour, S., Xu, J., and Razeghi, M., “AlGaN Ultraviolet Photoconductors Grown on Sapphire,” Appl. Phys. Lett. 68 (15) (1996) p. 2100.CrossRefGoogle Scholar
12.Khan, M. Asif, Chen, Q., Yang, J., Sun, C.J., Lam, B., Anwar, M.Z., Shur, M.S., Temkin, H., Dermott, B.T., Higgins, J.A., Burm, J., Schaff, W., and Eastman, L.F., in The Physics of Semiconductors, edited by Scheffler, M. and Zimmermann, R. (World Scientific, Singapore, 1996) p. 3171.Google Scholar
13.Lam, B., Chen, Q., Khan, M. Asif, Sun, C. J., and Yang, J., “High Responsivity Intrinsic Photoconductors Based on AlxGa1−xN” (unpublished manuscript).Google Scholar
14.Levinshtein, M.E. (private communication).Google Scholar
15.Chen, Q., Sun, C.J., Shur, M.S., Macmillan, M.F., Devaty, R.P., and Choyke, J., “Optoelectronic Devices Based on GaN, AlGaN, InGaN Homo-Heterojunctions and Superlattices,” in Proc. Optoelectronic Materials, Devices, and Integrated Circuits, Proc. SPIE 2397 (1995) p. 283.Google Scholar
16.Khan, M.A., Chen, Q., Yang, J.W., Sun, C.J., Adesida, I., Ping, A.T., and Shur, M., “Processing and Characterization of GaN-AlGaN Based Electronic and Optoelectronic Devices,” in Proc. of Int. Semiconductor Device Research Symp., Vol. II (Charlottesville, VA, December 1995) p. 535.Google Scholar
17.Khan, M. Asif, Kuznia, J.N., Olson, D.T., Blasingame, M., and Bhattarai, A.R., “Schottky Barrier Photodetector Based on Mg-Doped p-Type GaN Films,” Applied Phys. Lett. 63 (18) (1993) p. 2455.CrossRefGoogle Scholar
18.Khan, M. Asif, Shur, M.S., Chen, Q., Kuznia, J.N., and Sun, C.J., “Gated Photodetector Based on GaN/A1GaN Heterostructure Field Effect Transistor,” Electron. Lett. 31 (5) (1995) p. 398.CrossRefGoogle Scholar
19.Khan, M.A., Chen, Q., Sun, C.J., Yang, J.W., and Shur, M.S., “Recent Progress in AlGaN/GaN Based Field Effect Transistors” (MRS 1995 Fall Meeting).CrossRefGoogle Scholar
20.Khan, M.A., Kuznia, J.N., Olson, D.T., Schaff, W., Burm, G., Shur, M.S., Appl. Phys. Lett. 65 (9) (1994) p. 1121.CrossRefGoogle Scholar
21.Khan, M.A., Shur, M.S., Kuznia, J.N., Burm, J., and Schaff, W., “Temperature Activated Conductance in GaN/AIGaN Heterostructure Field Effect Transistors Operating at Temperatures up to 300°C,” Appl. Phys. Lett. 66 (9) (1995) p. 1083.CrossRefGoogle Scholar
22.Binari, S., Rowland, L.B., Kruppa, W., Kelner, G., Doverspike, K., and Gatskill, D.K., Electron. Lett. 30 (15) (1994) p. 1248.CrossRefGoogle Scholar
23.Binari, S., Rowland, L.B., Kruppa, W., Kelner, G., Doverspike, K., and Gatskill, D.K., presented at the 21st International Symposium on Compound Semiconductors, San Diego, Sept. 1994.Google Scholar
24.Binari, S., “GaN FETs for High-Temperature and Microwave Applications,” in Proc. Symp. on Wide Band Gap Semiconductors and Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII), edited by Ren, F., Buckley, D.N., Pearton, S.J., Van Daele, P., Chi, G.C., Kamijoh, T., and Schuermeyer, F., vol. 95–21 (The Electrochemical Society, Inc., New Jersey, 1995) p. 136.Google Scholar
25.Ruden, P.P., Shur, M.S., Akinwande, A.I., Nohava, J., Grider, D., and Baek, J.H., IEEE Trans. Electron Devices 37 (1990) p. 2171.CrossRefGoogle Scholar
26.Chen, Q., Khan, M.A., Yang, J.W., Sun, C.J., Shur, M.S., and Park, H., “High Transconductance Heterostructure Field Effect Transistors Based on AlGaN/GaN,” Appl. Phys. Lett. 69 (6) (1996) p. 794.CrossRefGoogle Scholar
27.Shur, M.S., GaAs Devices and Circuits (Plenum Publishing Corporation, New York, 1987).CrossRefGoogle Scholar
28.Mohammad, S.N., Fan, Z.F., Salvador, A., Öktas, O., Botchkarev, A.E., Kim, W., and Morkoç, H., Appl. Phys. Lett. 69 (10) (1996).CrossRefGoogle Scholar
29.Lee, K., Shur, M.S., Fjeldly, T.A., an d Ytterdal, T., Semiconductor Device Modeling for VLSI (Prentice Hall, Englewood Cliffs, NJ, 1993).Google Scholar
30.Shur, M.S. and Khan, M.A., “Wide Band Gap Semiconductors. Good Results and Great Expectations,” Proc. 22d Int. Symp. on GaAs and Related Compounds, Inst. Conf. Ser. (St. Petersburg, Russia, September 22-28, 1996.)Google Scholar
31.Burm, J., Schaff, W.J., and Eastman, L.F., Inst. Conf. Ser. Phys. 145 (1996) p. 785.Google Scholar
32.Bykhovski, A., Gelmont, B.L., Shur, M.S., and Khan, M.A., J. Appl. Phys. 76 (1995) p. 1616.CrossRefGoogle Scholar
33.Khan, M.A., Chen, Q., Shur, M.S., Dermott, B.T., and Higgins, J.A., “Microwave Operation of GaN/AlGaN Doped Channel Heterostructure Field Effect Transistors,” IEEE Electron Device Lett. 17 (7) (1996) p. 325.CrossRefGoogle Scholar
34.Burm, J., Chu, K., Schaff, W.J., Eastman, L.F., Khan, M.A., Chen, Q., Yang, J., and Shur, M.S., “0.12 Micron Gate III-V Nitride HFET with High Contact Resistance” (unpublished manuscript).Google Scholar
35.Khan, M.A., Chen, Q., Shur, M.S., Dermott, B.T., Higgins, J.A., Burm, J., Schaff, W.J., and Eastman, L.F., “CW Operation of Short Channel GaN/A1GaN Doped Channel Heterostructure Field Effect Transistors at 10 GHz and 15 GHz,” IEEE Electron Device Lett. 17 (12) (1996).CrossRefGoogle Scholar